ECC (Error-Correcting Code) Reg (Registered) DDR4 SDRAM (Double Data Rate Fourth Generation Synchronous Dynamic Random Access Memory) is a type of RAM that offers several benefits over non-ECC and unregistered memory. Some of the benefits of ECC Reg DDR4 SDRAM are:
- Improved Data Integrity: ECC Reg DDR4 SDRAM can detect and correct most common memory errors that can occur during data transmission or storage. The correction of errors in real-time ensures that the data stored or processed by the system is accurate and free from errors.
- Increased Reliability: ECC Reg DDR4 SDRAM is designed to be more reliable than non-ECC and unregistered memory. The error-correction feature helps to prevent system crashes, data corruption, and other issues that can result from memory errors. This increased reliability is especially important in mission-critical applications, such as server systems.
- Better Performance: While ECC Reg DDR4 SDRAM may have slightly higher latency than non-ECC and unregistered memory, it is still faster than other memory types, such as DDR3 SDRAM. Additionally, the registered feature helps to reduce memory signal noise and enhance system stability, resulting in better overall system performance.
- Scalability: ECC Reg DDR4 SDRAM is designed to support high-capacity memory modules, making it suitable for systems that require large amounts of memory, such as servers, workstations, and high-end gaming systems.
- Improved Energy Efficiency: DDR4 SDRAM is designed to operate at lower voltages than DDR3 and earlier memory types, resulting in improved energy efficiency and lower power consumption. This can lead to reduced operating costs and a smaller carbon footprint.
Memory latency refers to the time it takes for the processor to access data stored in the computer's RAM. In other words, it is the delay between the moment the processor requests data from the memory and the moment the data is available for use.
Memory latency is measured in clock cycles or nanoseconds and is influenced by various factors, including the memory's clock speed, timing settings, and data transfer rate. The latency is affected by three main factors: CAS Latency (CL), RAS-to-CAS Delay (tRCD), and Row Precharge Time (tRP).
CAS Latency (CL) is the time it takes between when the memory receives a command to read data and when the data is available. It is measured in clock cycles and is the most important factor in determining memory latency.
RAS-to-CAS Delay (tRCD) is the time it takes for the memory controller to access a specific row of memory before reading or writing data. It is also measured in clock cycles and is usually equal to or greater than CAS latency.
Row Precharge Time (tRP) is the time it takes to reset the memory after accessing a specific row of memory. It is also measured in clock cycles and is usually equal to or greater than RAS-to-CAS Delay.
Lower memory latency means that data can be accessed faster, resulting in better overall system performance. However, achieving low latency often requires sacrificing memory capacity, clock speed, or both.
It is important to note that memory latency is not the same as memory bandwidth. While memory latency measures the time it takes to access data stored in memory, memory bandwidth measures the amount of data that can be transferred from the memory to the processor per second. High bandwidth is important for applications that require high data transfer rates, such as video editing, gaming, and 3D rendering.
Advantages of Low Latency RAMLow latency RAM, also known as low-latency memory, is RAM that has a lower CAS (Column Access Strobe) latency than standard RAM. CAS latency is a measure of how many clock cycles it takes to access a column of data in RAM after the memory controller has requested it. The lower the CAS latency, the faster the RAM can respond to requests, and the less time the processor has to wait for data to be returned. Some of the advantages of low latency RAM include:
- Faster Performance: Low latency RAM can offer faster performance than standard RAM because the memory controller can retrieve data more quickly. This can lead to better system responsiveness, faster application load times, and smoother multitasking.
- Better Gaming Performance: Low latency RAM can provide a significant performance boost in gaming applications because games are often heavily dependent on memory bandwidth and latency. Low latency RAM can help reduce input lag, improve frame rates, and provide a smoother gaming experience.
- Improved Productivity: Low latency RAM can improve productivity in applications that require high levels of data processing, such as video editing, 3D modeling, and scientific simulations. Faster RAM can help reduce the time it takes to render videos or perform complex calculations.
- Enhanced Overclocking: Low latency RAM is often preferred by overclockers because it can provide a higher level of stability at higher frequencies. This means that users can achieve higher overclocks and performance gains without compromising system stability.
- Reduced Power Consumption: Low latency RAM can also help reduce power consumption because it requires fewer clock cycles to access data, which can lead to shorter data transfer times and lower energy consumption.
General Information
- Manufacturer: Dell
- Manufacturer Part Number: A7945704
- Type: Memory (RAM)
- Sub-Type: PC4-17000
- Product Name: 8GB DDR4 SDRAM Memory Module
Technical Information
- Storage Capacity: 8GB
- Memory Technology: DDR4 SDRAM
- Number Of Modules: 1 X 8GB
- Bus Speed: 2133MHZ DDR4-2133/PC4-17000
- Data Integrity Check: ECC
- Signal Processing: Registered
- Ram Features: Dual Rank
- Cas Latency Timings: CL15
- Voltage: 1.2V
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