Description
DDR4 SDRAM TechnologyDDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) is the latest generation of memory technology for computers and servers. It is designed to provide higher performance and improved energy efficiency over its predecessor, DDR3 SDRAM.
- Increased memory bandwidth: DDR4 SDRAM provides increased memory bandwidth, which can lead to better performance in certain types of systems.
- Higher clock speeds: DDR4 SDRAM supports higher clock speeds than DDR3 SDRAM, which can result in faster data transfer rates.
- Increased memory capacity: DDR4 SDRAM can support higher memory capacities than DDR3 SDRAM.
- Lower power consumption: DDR4 SDRAM has a lower operating voltage than DDR3 SDRAM, which can result in lower power consumption and improved energy efficiency.
- Better signal integrity: DDR4 SDRAM uses a more advanced signaling technology than DDR3 SDRAM, which can result in better signal integrity and improved system stability.
- Improved thermal performance: DDR4 SDRAM has improved thermal performance, which can help to reduce the risk of overheating in high-performance systems.
- Enhanced error detection and correction: DDR4 SDRAM has enhanced error detection and correction capabilities, which can help to improve system reliability and prevent data corruption.
- Improved data security: DDR4 SDRAM has improved data security features, such as advanced encryption and secure boot capabilities.
- Enhanced memory refresh: DDR4 SDRAM has enhanced memory refresh capabilities, which can help to improve memory performance and extend the life of the memory module.
- Better energy efficiency: DDR4 SDRAM is more energy efficient than DDR3 SDRAM, which can help to reduce power consumption and improve system performance.
- Improved scalability: DDR4 SDRAM is designed to be more scalable than DDR3 SDRAM, which can help to improve system performance and reduce the risk of memory bottlenecks.
- Optimized for virtualization: DDR4 SDRAM is optimized for virtualization environments, which can help to improve system performance and reduce the risk of memory bottlenecks.
- Improved system reliability: DDR4 SDRAM has improved system reliability features, such as advanced error detection and correction capabilities, which can help to prevent data corruption and improve system stability.
- Enhanced memory management: DDR4 SDRAM has enhanced memory management features, such as memory mirroring and memory interleaving, which can help to improve system performance and reduce the risk of memory bottlenecks.
- Support for advanced memory technologies: DDR4 SDRAM supports advanced memory technologies, such as NUMA (Non-Uniform Memory Access) and memory virtualization, which can help to improve system performance and reduce the risk of memory bottlenecks.
288-pin DIMM form Factor
- Compatibility with HPE Server Models
- Installation and Configuration
- Troubleshooting and Maintenance
- Warranty and Support
- Frequency and CAS Latency
- Power Consumption and Thermal Design
- Error Detection and Correction
- Signal Integrity and Data Integrity
- Memory Channel and Density
- Memory Ranking and organization
- Memory Bus and Data Rate
- Voltage and Timing Parameters
- Upgrading and Scalability
- Cost-effectiveness and ROI.
Memory Layout and Organization
Memory layout and organization refer to the physical arrangement and organization of memory modules within a computer system. Memory layout is the physical arrangement of memory modules on the motherboard and memory organization refers to how the memory is organized and accessed.
There are several factors that affect memory layout and organization including:
- Memory channel configuration: This refers to the number of memory channels that are present on the motherboard and the number of memory modules that can be installed in each channel.
- Memory bank and ranks: Memory is organized into banks and ranks. Banks refer to the physical memory modules themselves, while ranks refer to the organization of memory within a bank.
- Memory interleaving and mirroring: Interleaving is a method of organizing memory so that accesses to different memory locations can occur simultaneously, while mirroring is a method of copying data across multiple memory banks to provide redundancy in case of failure.
- Memory address mapping: This refers to how the memory addresses are mapped to the physical memory modules.
- Memory command and control signals: These are the signals that are used to control and communicate with the memory modules.
The understanding of these factors is important for system administrators and engineers to properly install, configure and troubleshoot memory in a server.
General Information of this HPE 815102-S21
- Brand Name: HPE
- Model Number or SKU# 815102-S21
- Type: Memory (RAM)
- RAM Type: Pc4-21300
- Product Name: 128GB DDR4 SDRAM Memory Kit
Technical Information about 128GB DDR4 Ram
- Storage Capacity: 128GB
- Memory Technology: DDR4 SDRAM
- Number Of Modules: 1 X 128GB
- Bus Speed: 2666MHZ DDR4-21300/PC4-2666
- Data Integrity Check: Ecc
- Signal Processing: Registered
- Cas Latency Timings: Cl19
- Rank Features: 8rx4
- Form Factor: 288-pin Lrdimm
Physical Characteristics of HPE Memory
- Dimensions (W X D X H) : 8.89 X 19.81 X 1.91 Cm (3.5 X 7.8 X 0.75 In)
- Weight: 0.45 Kg (1 Lb)
Compatibility for 128GB DDR4 Ram
- HPE Convergedsystem 500, Proliant Bl460c Gen10, Dl360 Gen10, Dl380 Gen10, Dl560 Gen10, Ml350 Gen10, Xl230k Gen10, Synergy 480 Gen10, 660 Gen10
Contact us or ask for live chat/help if you have any questions about the compatibility of this item to ensure the model’s matching features with your current system.
