Description
Capacity and Type of HMAA8GL7AMR4N-VK Hynix Memory
The HMAA8GL7AMR4N-VK Hynix memory has a capacity of 64GB. This means it can store 64 gigabytes of data. It is a type of DDR4 SDRAM memory, which stands for “Double Data Rate 4 Synchronous Dynamic Random-Access Memory”. DDR4 is the latest and fastest generation of memory technology that is widely used in modern computers and servers. The “Registered” design of the memory, indicated by the “R” in its name, refers to a memory buffer that is used to improve system stability and reliability in multi-module systems.
Operating Voltage and Power Consumption
The operating voltage of the HMAA8GL7AMR4N-VK Hynix memory is 1.2V. This means that it requires a voltage of 1.2 volts to operate properly. Low voltage memory modules like DDR4 help to reduce power consumption and increase efficiency compared to previous generations of memory technology.
The power consumption of the HMAA8GL7AMR4N-VK Hynix memory will depend on various factors such as the speed, frequency, and usage patterns. However, DDR4 memory is known for its low power consumption compared to previous generations of memory, making it suitable for use in energy-efficient systems and devices. By using less power, the memory can reduce the overall power consumption of the system and contribute to longer battery life in portable devices.
Error Correction and Data Integrity
The HMAA8GL7AMR4N-VK Hynix memory features Error Correction Code (ECC), indicated by the “ECC” in its name. ECC is a method of detecting and correcting errors that can occur during the storage and retrieval of data. It helps to ensure the integrity and accuracy of stored data by detecting and correcting single-bit errors. In the event of a data error, the ECC mechanism can automatically correct the error, reducing the risk of data corruption and improving overall system stability.
The use of ECC memory also provides a higher level of data integrity compared to non-ECC memory, making it suitable for use in mission-critical applications where data accuracy and reliability are essential. The “Registered” design of the memory also helps to improve system stability and reliability, especially in multi-module systems, by adding an extra memory buffer to regulate the flow of data.
Memory Interface and Form Factor
The HMAA8GL7AMR4N-VK Hynix memory uses a 288-Pin LRDIMM interface, which stands for “Load-Reduced Dual In-line Memory Module”. The LRDIMM interface is a type of memory module that is used in modern computer systems and servers to provide high-density memory capabilities. The 288-pin interface provides a large number of connections to the memory controller, allowing for high-speed data transfer and increased memory capacity.
The form factor of the HMAA8GL7AMR4N-VK Hynix memory is LRDIMM, which is a type of memory module that is longer than other standard DDR4 memory modules. The increased length of the module provides more space for additional memory buffers, which can help to improve system stability and reliability, especially in multi-module systems.
General Information
- Manufacturer: Sk Hynix
- Manufacturer Part Number: HMAA8GL7AMR4N-VK
- Product Name: 64GB DDR4 SDRAM Memory Module
Technical Information
- Storage Capacity: 64GB
- Memory Technology: DDR4 SDRAM
- Number Of Modules: 1 X 64GB
- Bus Speed: 2666mhz DDR4-21300/PC4-2666v
- Data Integrity Check: Ecc
- Signal Processing: Registered
- Cas Latency Timings: Cl19
- Rank Features: Quad Rank X4
