Description
Technical Specifications of Samsung M378A1K43CB2-CTD DDR4 RAM
Here are 10 technical specifications of Samsung M378A1K43CB2-CTD DDR4 RAM:
- Memory Type: DDR4 SDRAM
- Memory Size: 8GB
- Memory Speed: 2666MHz
- Memory Standard: PC4-21300
- Rank: 1Rx8
- Error Correction Code: Non-ECC
- CAS Latency: CL19
- Voltage: 1.2V
- Pin Count: 288-pin
- Form Factor: DIMM
Memory Capacity and Speed of Samsung M378A1K43CB2-CTD DDR4 RAM
The Samsung M378A1K43CB2-CTD DDR4 RAM has a memory capacity of 8GB and a speed of 2666MHz, also known as PC4-21300. This means it can transfer data at a rate of 21.3GB/s. The RAM is also unbuffered, which means it does not have a buffer chip to improve performance, and has a single rank configuration with one side of memory chips. It operates at a low voltage of 1.2V, making it energy-efficient. Additionally, it has a CAS latency of 19, which determines the delay in transferring data.
The Samsung M378A1K43CB2-CTD DDR4 RAM has a memory capacity of 8GB (1x8GB). This means that the RAM module has a storage capacity of 8 gigabytes of data that can be accessed and transferred at a time.
The RAM has a clock speed of 2666MHz, which means it can transfer data at a rate of 2666 million cycles per second. This high clock speed helps to increase the performance of the computer system by providing faster access to data, faster application loading times, and improved multitasking capabilities.
Additionally, the Samsung M378A1K43CB2-CTD DDR4 RAM has a PC4-21300 rating, which indicates that the RAM has a peak transfer rate of 21,300 MB/s. This rating is based on the maximum bandwidth that the RAM module can support and is used to measure the overall performance of the RAM module.
Energy Efficiency of Samsung M378A1K43CB2-CTD DDR4 RAM
Samsung M378A1K43CB2-CTD DDR4 RAM is designed to be energy-efficient. It has a low operating voltage of 1.2V, which helps to reduce power consumption and heat generation. This makes it an ideal choice for systems that require high memory capacity and speed, but also need to be energy-efficient, such as laptops and servers.
Compared to DDR3 RAM, DDR4 RAM has lower operating voltage requirements, which means that it consumes less power and generates less heat. This translates into lower power bills and longer battery life for laptops and other mobile devices. Additionally, the low voltage also reduces the strain on the system’s power supply, which can help to extend its lifespan.
The energy efficiency of Samsung M378A1K43CB2-CTD DDR4 RAM is further enhanced by its unbuffered design. Buffered RAM modules require additional power to maintain their buffers, which can increase power consumption and heat generation. Unbuffered RAM modules, on the other hand, have a simpler design and require less power to operate, making them more energy-efficient.
General Information
- Manufacturer: Samsung
- Part Number or SKU# M378A1K43CB2-CTD
- Type: Memory (RAM)
- Sub-Type: Pc4-21300
- Product Name: 8GB DDR4 SDRAM Memory Module
Technical Information
- Storage Capacity: 8 GB
- Memory Technology: DDR4 Sdram
- Number of Modules: 1 X 8 GB
- Memory Speed: 2666 MHz Ddr4-2666/pc4-21300
- Data Integrity Check: Ecc
- Features: Single Rank, Unbuffered
- Cas Latency Timings: Cl19
Physical Characteristics
- Dimensions (W X D X H): 8.89 X 19.81 X 1.91 Cm (3.5 X 7.8 X 0.75 In)
- Weight: 0.45 Kg (1 Lb)
Contact us or ask for live chat/help if you have any questions about the compatibility of this item to ensure the model’s matching features with your current system.