Description
Understanding Dual Rank Memory in M393B1K70EB0-YH9 Memory Module
Dual Rank Memory is a type of memory organization that provides a higher memory density by allowing the memory module to access two sets of DRAM chips on each rank. In the case of M393B1K70EB0-YH9 memory module, it has a dual rank configuration, which means that there are two sets of DRAM chips on the module. This configuration improves the memory performance and allows for greater data transfer rates. Additionally, dual rank memory modules may offer better stability and compatibility with certain systems due to their organization.
Significance of ECC (Error-Correcting Code) Technology in M393B1K70EB0-YH9 Memory Module
ECC (Error-Correcting Code) technology is an important feature in M393B1K70EB0-YH9 Memory Module as it helps in detecting and correcting errors that occur during data transmission and storage. Some of the significant advantages of ECC technology in this memory module are:
- Detects and corrects single-bit errors: ECC technology is capable of detecting and correcting single-bit errors that can occur during data transmission and storage. This ensures that the data stored in the memory module is accurate and reliable.
- Prevents system crashes: ECC technology prevents system crashes that can occur due to memory errors. This helps in ensuring that the system runs smoothly without any interruptions.
- Improves system stability: By detecting and correcting errors in real-time, ECC technology improves system stability and reduces the likelihood of crashes and other errors.
- Increases system uptime: The use of ECC technology in memory modules ensures that the system remains operational for longer periods of time, thereby increasing system uptime.
- Improves data integrity: ECC technology helps in improving data integrity by ensuring that the data stored in the memory module is accurate and reliable.
- Reduces maintenance costs: By improving system stability and uptime, ECC technology reduces the need for maintenance and repair, thereby reducing maintenance costs.
- Ensures regulatory compliance: Many regulatory standards require the use of ECC memory in critical systems to ensure data integrity and reliability. By using ECC memory in the system, the organization can ensure regulatory compliance.
- Suitable for critical systems: ECC memory is particularly suitable for critical systems such as servers, workstations, and other mission-critical systems that require high levels of reliability and uptime.
Memory Capacity and Speed of M393B1K70EB0-YH9 Memory Module
The M393B1K70EB0-YH9 Samsung memory module has a capacity of 8GB (gigabytes) and a speed of 1333MHz (megahertz). It is designed to operate at PC3-10600 speed and has a latency of CL9 (column address strobe latency). The memory module is registered and ECC (error-correcting code) enabled, which helps detect and correct errors that may occur during data transmission. The module also features a 240-pin DIMM (dual in-line memory module) form factor, which makes it compatible with certain types of motherboards that support DDR3 memory. Additionally, the memory module is dual rank, which means it has two sets of memory chips that allow for better memory access and performance.
General Information
- Brand: samsung
- Manufacturer part number: M393B1K70EB0-YH9
- Type: Memory (RAM)
- Sub-Type: Pc3-10600
- Product name: 8gb ddr3 sdram memory module
Technical Information
- Storage capacity: 8gb
- Memory technology: ddr3 sdram
- Number of modules: 1 x 8gb
- Bus speed: 1333mhz ddr3-1333/pc3-10600
- Data integrity check: ecc
- Signal processing: registered
- Cas latency timings: cl9
Physical characteristics
- Form factor: 240-pin dimm
