Description
Memory Capacity and Configuration of M393B2G70AH0CH9
The M393B2G70AH0CH9 is a Samsung memory module with a capacity of 16GB, which means it has 16 billion bytes of memory. It has a DDR3 SDRAM technology and a clock speed of 1333MHz, which means it can transfer data at a rate of 1333 million times per second.
This memory module has a dual rank configuration, which means it has two sets of memory chips that are accessed independently. This allows the module to process more data simultaneously and improves its overall performance. It also has an ECC (Error-Correcting Code) technology, which detects and corrects errors that may occur during data transmission, ensuring data accuracy and reliability.
The memory module has a CL9 latency timing, which is the number of clock cycles that it takes for the module to respond to a command from the CPU. A lower latency timing indicates faster response time and better performance. Additionally, this module is ECC registered, which means that it has a register that helps to reduce electrical load and signal delays, improving its stability and reliability.
The M393B2G70AH0CH9 has a 240-pin DIMM (Dual In-Line Memory Module) form factor, which is a type of memory module commonly used in desktop computers and servers. It operates on a voltage of 1.5V and is designed to work with systems that support DDR3 SDRAM technology.
Advantages of DDR3 SDRAM in Memory Performance
DDR3 SDRAM (Double Data Rate 3 Synchronous Dynamic Random Access Memory) provides several advantages in memory performance, including:
- Higher Bandwidth: DDR3 SDRAM provides higher bandwidth compared to DDR2 SDRAM, allowing for faster data transfer rates between the memory module and the CPU.
- Increased Data Transfer Rates: DDR3 SDRAM provides increased data transfer rates compared to DDR2 SDRAM, leading to faster read and write operations.
- Lower Power Consumption: DDR3 SDRAM operates at lower voltages compared to DDR2 SDRAM, resulting in lower power consumption and reduced heat output.
- Higher Density: DDR3 SDRAM allows for higher memory density, enabling larger memory modules to be created without increasing the physical size of the module.
- Improved Performance: DDR3 SDRAM has a higher prefetch buffer size, allowing for more data to be transferred per clock cycle, resulting in improved performance.
- Reduced Latency: DDR3 SDRAM has reduced latency compared to DDR2 SDRAM, resulting in faster access to data stored in memory.
Understanding Dual Rank Memory in M393B2G70AH0CH9
M393B2G70AH0CH9 is a dual rank memory module, which means that it has two ranks of memory chips on the module. A rank is a set of memory chips that are accessed together when data is read or written to the memory module. Dual rank memory can improve memory performance by allowing the memory controller to access two sets of memory chips at the same time, effectively doubling the memory bandwidth. This can be especially beneficial in applications that require large amounts of data to be transferred quickly, such as video editing or scientific computing. Dual rank memory is also generally more cost-effective than single rank memory, as it allows more memory to be installed per module without significantly increasing the cost.
General Information
- Manufacturer: samsung
- Manufacturer part number: M393B2G70AH0CH9
- Type: Memory (RAM)
- Sub-Type: Pc3-10600
- Product name: 16gb ddr3 sdram memory module
Technical Information
- Storage capacity: 16gb
- Memory technology: ddr3 sdram
- Number of modules: 1 x 16gb
- Bus speed: 1333mhz ddr3-1333/pc3-10600
- Data integrity check: ecc
- Signal processing: registered
- Cas latency timings: cl9
- Rank featurers: dual rank
- Voltage: 1.5v
- Platform support: server
