Description
DDR3 SDRAM Memory Standard
DDR3 SDRAM (Double Data Rate 3 Synchronous Dynamic Random Access Memory) is a type of computer memory that is designed to offer faster data transfer rates, higher capacities, and lower power consumption compared to its predecessor DDR2 SDRAM.
The DDR3 SDRAM standard was introduced in 2007 and is widely used in modern computing systems, particularly in servers, workstations, and high-performance computing systems. The standard defines several key parameters that determine the performance and functionality of DDR3 memory modules, including clock speed, latency timings, voltage, and capacity.
DDR3 SDRAM memory modules typically operate at clock speeds ranging from 800 MHz to 2133 MHz and can support a range of latency timings, from CL3 to CL13. The standard also supports a range of memory densities, with modules ranging from 512 MB to 16 GB in capacity.
One of the key advancements of the DDR3 SDRAM standard is its use of a lower operating voltage compared to DDR2 SDRAM. DDR3 memory modules typically operate at 1.5 volts, which reduces power consumption and improves energy efficiency.
Another important feature of DDR3 SDRAM is its support for ECC (Error-Correcting Code) technology, which enables the detection and correction of single-bit errors in memory data. ECC is particularly important in mission-critical computing applications, where data integrity is of utmost importance.
Registered Memory Technology
Registered memory technology, also known as buffered memory, is a type of memory technology that is commonly used in server and high-performance computing systems. It is designed to overcome some of the limitations of unbuffered memory, which is the standard type of memory used in most consumer-grade computers.
In a registered memory module, a buffer chip is added between the memory module and the memory controller. This buffer chip acts as a traffic cop, receiving and distributing data between the memory chips and the memory controller. This helps to reduce the electrical load on the memory controller, which in turn improves stability and reliability.
One of the key advantages of registered memory is that it can support larger memory capacities than unbuffered memory. This is because the buffer chip can handle more memory chips, allowing for greater density in a single memory module.
Registered memory also typically has higher latency timings than unbuffered memory, as data must pass through the buffer chip before it can be accessed by the memory controller. However, the reduction in electrical load on the memory controller can also improve memory performance in some cases, particularly when dealing with large memory capacities.
Memory Module Capacity and Organization
Memory module capacity and organization refer to the amount of memory that a module can store and how that memory is arranged within the module. This information is important to understand when choosing memory modules for a computer system, as it can affect system performance and compatibility.
Memory module capacity is measured in bytes, and commonly expressed in terms of gigabytes (GB) or terabytes (TB). For example, a memory module with a capacity of 16 GB can store 16 billion bytes of data.
Memory organization refers to how the memory is arranged within the module, including the number of memory chips on the module, the number of ranks, and the number of banks. Memory chips are the physical components that store the memory data, while ranks and banks are organizational units that help to manage the memory access.
A memory rank is a group of memory chips that are accessed together as a single unit. Multiple ranks can be present on a single memory module, and each rank is typically accessed independently by the memory controller.
Memory banks, on the other hand, are logical divisions within a rank that are used to manage memory access. Each bank can be accessed independently, allowing for more efficient memory access and faster data transfer rates.
The organization of memory within a module can affect system performance, particularly when dealing with large memory capacities. In general, larger memory capacities require more ranks and banks to be present, which can increase the complexity of memory access and potentially reduce system performance.
General Information
- Manufacturer : Samsung
- Manufacturer part number : M393B2G70BH0CMA
- Type: Memory (RAM)
- Sub-Type: PC3-14900
- Product name : 16gb ddr3 sdram memory module
Technical Information
- Storage capacity : 16gb
- Memory technology : ddr3 sdram
- Number of modules : 1 x 16gb
- Memory speed :1866mhz ddr3-1866/pc3-14900
- Data integrity check : ecc
- Signal processing : registered
- Ram features : dual rank
- Cas latency timings : cl13
- Voltage: 1.5v
Physical characteristics
- Form factor : 240-pin dimm
