The Samsung M386A8K40DM2-CTD6Y is a 64GB memory module designed for use in high-performance computing environments. This memory module is built with DDR4 SDRAM technology and is designed to operate at a speed of 2666MHz with a voltage of 1.2v. The module is designed to work with systems that require error-correcting code (ECC) memory.
One of the key features of this memory module is its quad rank configuration. This means that it contains four ranks of memory chips, which allows it to provide high memory density and high performance. The module is also registered, which means that it includes a register to buffer address and control signals, providing better reliability and stability in high-load environments.
The Samsung M386A8K40DM2-CTD6Y memory module is compatible with a wide range of systems that support DDR4 memory technology. It is also designed to work with systems that require high-bandwidth memory (HBM) or high-bandwidth memory 2 (HBM2) technology.
The memory module is designed to provide a number of benefits to users, including faster data transfer speeds, improved system stability, and higher memory density. It is ideal for use in a variety of high-performance computing environments, including data centers, scientific research facilities, and high-end gaming systems.
Compatibility with Different DevicesThe Samsung M386A8K40DM2-CTD6Y 64GB memory module is designed to be compatible with a wide range of devices that support DDR4 memory technology. This includes servers, workstations, desktops, and laptops that are designed to work with DDR4 memory modules.
To ensure compatibility with your device, it is important to check the device's documentation to confirm that it supports DDR4 memory modules and that it is compatible with the specific type of memory module that you are considering. Some devices may require specific memory configurations or may not be compatible with certain memory speeds or densities.
The Samsung M386A8K40DM2-CTD6Y memory module is also designed to work with systems that require error-correcting code (ECC) memory. ECC memory is a type of memory that includes additional bits of data that are used to detect and correct errors that may occur during data transfer. This makes ECC memory more reliable and stable in high-load computing environments.
In addition to its compatibility with a wide range of devices, the Samsung M386A8K40DM2-CTD6Y memory module is also designed to work with high-bandwidth memory (HBM) and high-bandwidth memory 2 (HBM2) technology. HBM and HBM2 memory are designed to provide higher memory bandwidth and lower power consumption, making them ideal for use in high-performance computing environments.
Technical SpecificationsThe Samsung M386A8K40DM2-CTD6Y 64GB memory module is a high-performance memory solution that is designed for use in a variety of computing environments. Here are some of the technical specifications of this memory module:
- Capacity: The Samsung M386A8K40DM2-CTD6Y memory module has a capacity of 64GB. This is achieved through the use of quad rank memory chips, which provide higher memory density.
- Memory Type: The memory module is built with DDR4 SDRAM technology, which provides faster data transfer speeds and lower power consumption compared to previous generations of memory technology.
- Memory Speed: The Samsung M386A8K40DM2-CTD6Y memory module is designed to operate at a speed of 2666MHz. This makes it ideal for use in high-performance computing environments that require fast data transfer speeds.
- CAS Latency: The CAS latency of the memory module is CL19. This is the number of clock cycles that elapse between the time a memory controller tells the memory module to access a particular memory column and the time the data is available to the memory controller.
- Voltage: The Samsung M386A8K40DM2-CTD6Y memory module operates at a voltage of 1.2v. This makes it a low-power memory solution, which is ideal for use in energy-efficient computing environments.
- Error-Correcting Code (ECC): The memory module includes error-correcting code (ECC) technology, which allows it to detect and correct errors that may occur during data transfer. This makes it more reliable and stable in high-load computing environments.
- Rank Configuration: The memory module is designed with quad rank configuration, which means that it includes four ranks of memory chips. This provides higher memory density and higher performance compared to single or dual rank memory modules.
- Registered Design: The memory module is designed with a registered architecture, which includes a register to buffer address and control signals. This provides better reliability and stability in high-load computing environments.
- Manufacturer: Samsung
- Part Number or SKU# M386A8K40DM2-CTD6Y
- Type: Memory (RAM)
- Sub-Type: Pc4-21300
- Product Name: 64GB DDR4 SDRAM Memory Module
- Storage Capacity: 64GB
- Memory Technology: DDR4 SDRAM
- Number of Modules: 1 X 64GB
- Bus Speed: 2666MHz Ddr4-21300/pc4-2666v
- Data Integrity Check: Ecc
- Signal Processing: Registered
- Cas Latency Timings: Cl19
- Rank Features: Quad Rank X4
- Dimensions (W X D X H): 8.89 X 19.81 X 1.91 Cm (3.5 X 7.8 X 0.75 In)
- Weight: 0.45 Kg (1 Lb)
Contact us or ask for live chat/help if you have any questions about the compatibility of this item to ensure the model's matching features with your current system.
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