Description
Smart Memory Functionality and Benefits
Smart Memory Functionality refers to the advanced features and capabilities that are built into the HMA84GL7AFR4N-VK Hynix 32GB DDR4 memory module. These features allow for improved performance, reliability, and power efficiency compared to traditional memory modules.
Benefits of Smart Memory Functionality:
- Enhanced Performance: The HMA84GL7AFR4N-VK memory module offers fast data transfer rates of 2666MHz, which can significantly boost the overall performance of a computer system.
- ECC and Registered Design: Error Correction Code (ECC) and registered design provide improved data integrity and reliability by detecting and correcting errors in real-time.
- Dual Rank Technology: The dual rank technology enhances memory capacity and performance by allowing for higher memory density on a single module.
- Power Efficiency: The 1.2V power supply requirement results in reduced power consumption and improved energy efficiency compared to previous DDR generations.
- Improved Memory Bandwidth: The 288-pin LRDIMM configuration provides high memory bandwidth, which translates to faster data access and improved system performance.
- Pin Configuration: The 288-pin configuration allows for increased memory density and improved performance compared to traditional memory modules.
In conclusion, the Smart Memory Functionality and benefits of the HMA84GL7AFR4N-VK Hynix 32GB DDR4 memory module provide a high-performance, reliable, and energy-efficient solution for computer systems that demand a high level of memory capacity and performance.
Error Correction and Data Integrity
Error Correction and Data Integrity are crucial factors for ensuring the reliability and stability of computer systems. The HMA84GL7AFR4N-VK Hynix 32GB DDR4 memory module is designed to provide high levels of data integrity and error correction through the use of Error Correction Code (ECC) and registered design.
ECC: ECC is a type of memory technology that detects and corrects single-bit errors in real-time. This helps to ensure that data is transmitted and stored correctly, reducing the likelihood of data corruption or loss. The ECC functionality in the HMA84GL7AFR4N-VK memory module provides a high level of data protection and helps to ensure the reliability and stability of the system.
Registered Design: The registered design in the HMA84GL7AFR4N-VK memory module provides a buffer between the memory controller and the memory modules. This buffer helps to manage the flow of data, reduce signal noise, and improve reliability. The registered design provides additional protection against data corruption, helping to ensure the integrity of the data stored in memory.
Pin Configuration and Form Factor
Pin Configuration and Form Factor are important aspects of the design and functionality of the HMA84GL7AFR4N-VK Hynix 32GB DDR4 memory module.
Pin Configuration: The HMA84GL7AFR4N-VK memory module features a 288-pin configuration, which provides a high level of memory density and improved performance compared to traditional memory modules. The 288-pin design allows for faster data access and improved overall system performance.
Form Factor: The HMA84GL7AFR4N-VK memory module has a Load Reduced Dual In-line Memory Module (LRDIMM) form factor. This form factor provides high memory density and improved performance compared to traditional memory modules. The LRDIMM design also helps to reduce signal noise, which can improve the stability and reliability of the system.
In conclusion, the pin configuration and form factor of the HMA84GL7AFR4N-VK Hynix 32GB DDR4 memory module provide improved performance, reliability, and stability compared to traditional memory modules. The 288-pin design and LRDIMM form factor allow for increased memory density, faster data access, and improved signal integrity, which results in a high-performance and reliable memory solution for computer systems.
General Information
- Manufacturer: Sk Hynix
- Manufacturer Part Number: Hma84gl7afr4n-Vk
- Product Name: 32gb Ddr4 Sdram Memory Module
Technical Information
- Storage Capacity: 32gb
- Memory Technology: Ddr4 Sdram
- Number Of Modules: 1 X 32gb
- Bus Speed: 2666mhz Ddr4-21300/Pc4-2666v
- Data Integrity Check: Ecc
- Signal Processing: Registered
- Cas Latency Timings: Cl19
- Rank Features: 2rx4
