Description
Key Features and Specifications
The HMABAGL7A4R4N-VN Hynix 128GB DDR4 memory module has several key features and specifications that make it an ideal choice for various applications, including server and workstation systems. Here are some of the key features and specifications of this memory module:
- Capacity: The HMABAGL7A4R4N-VN is a 128GB DDR4 memory module, providing ample memory for even the most demanding applications.
- Speed: The memory module operates at 2666 MHz, providing fast and responsive performance for applications that demand high memory bandwidth.
- PC4-21300: The PC4-21300 designation indicates the module’s performance characteristics and is a measure of its maximum data transfer rate in MB/s.
- CL19: The CL19 timing indicates the delay between the time the memory controller sends a command and the time the data is available. A lower CL value indicates faster memory performance.
- ECC (Error Correction Code): The ECC feature provides data protection by detecting and correcting single-bit errors in real-time, ensuring the integrity of stored data.
- Registered: The registered designation indicates that the module uses a register to buffer the data being sent to the memory controller, improving system stability.
- Octal rank: The octal rank indicates the number of memory devices used to create the memory module, with an octal rank module using 8 memory devices.
- Low voltage: The 1.2V operating voltage of the module helps reduce power consumption, improving energy efficiency.
- Load reduced DIMM: The load reduced DIMM design of the module reduces the electrical load on the memory controller, providing improved system stability and performance while reducing power consumption.
- 288-pin: The 288-pin form factor is the standard for DDR4 memory modules, providing compatibility with a wide range of systems.
These features and specifications make the HMABAGL7A4R4N-VN Hynix 128GB DDR4 memory module an excellent choice for server and workstation systems that demand high performance, reliability, and stability.
Error Correction and Data Integrity
The HMABAGL7A4R4N-VN Hynix 128GB DDR4 memory module features Error Correction Code (ECC) for improved data integrity and reliability. ECC is a type of error-detection code that can detect and correct single-bit errors in real-time. This is particularly important in applications where data accuracy and reliability are critical, such as in server and workstation systems.
In ECC memory, an additional memory bit is used for every 8 bits of data stored in the memory module. These extra bits are used to store error-correction information, allowing the system to detect and correct single-bit errors as they occur. This provides a level of data protection that is not possible with non-ECC memory.
The ECC feature of the HMABAGL7A4R4N-VN Hynix 128GB DDR4 memory module is particularly beneficial in systems that run mission-critical applications or store sensitive data. By ensuring the accuracy and integrity of stored data, ECC can help prevent data loss and improve system stability and reliability.
In addition to ECC, the registered design of the memory module helps to ensure data integrity by buffering the data being sent to the memory controller. This can help prevent data corruption and improve system stability, further enhancing the reliability of the HMABAGL7A4R4N-VN Hynix 128GB DDR4 memory module.
Power Efficiency and Energy Savings
The HMABAGL7A4R4N-VN Hynix 128GB DDR4 memory module features several power-saving features designed to improve power efficiency and reduce energy consumption. The low voltage of 1.2V used by the module is one of these features. Compared to DDR3 memory, which typically operates at 1.5V, DDR4 memory operates at a lower voltage, reducing the power consumption of the memory system.
The “Load Reduced DIMM” (LR-DIMM) design of the HMABAGL7A4R4N-VN Hynix 128GB DDR4 memory module also contributes to its power efficiency. LR-DIMMs use a register chip to buffer data and control signals, reducing the load on the memory controller and improving power efficiency.
In addition, the octal rank design of the HMABAGL7A4R4N-VN Hynix 128GB DDR4 memory module helps to improve its power efficiency. With octal rank memory, data can be accessed faster and with less power consumption compared to quad-rank memory.
General Information
- Manufacturer: SK HYNIX
- Manufacturer Part Number: HMABAGL7A4R4N-VN
- Product Name: 128GB DDR4 SDRAM Memory Module
Technical Information
- Storage Capacity: 128GB
- Memory Technology: DDR4 SDRAM
- Number Of Modules: 1 X 128GB
- Bus Speed: 2666mhz DDR4-21300/PC4-2666v
- Data Integrity Check: ECC
- Signal Processing: Registered,Load Reduced
- Cas Latency Timings: Cl19
- Rank Features: Octal Rank X4
