Description
Smart Memory Functionality and Benefits
The Hynix 128GB Memory (PC4-21300 DDR4 2166MHz 288-Pin SDRAM Memory) uses smart memory technology to enhance its performance and reliability. Smart memory refers to memory modules that have built-in error correction and monitoring functions, which help to prevent data corruption and improve system stability.
The benefits of using smart memory include:
- Improved system stability: Smart memory helps to detect and correct errors in real-time, reducing the risk of crashes or freezes.
- Enhanced performance: The built-in error correction and monitoring functions improve data transfer speeds, reducing latency and improving overall system performance.
- Increased reliability: Smart memory helps to prevent data corruption, reducing the risk of data loss and increasing the overall reliability of the system.
- Compatibility: Smart memory is compatible with a wide range of motherboards and systems, making it easy to upgrade existing systems with improved memory performance.
Error Correction and Data Integrity
Error correction and data integrity are key features of the Hynix 128GB Memory (PC4-21300 DDR4 2166MHz 288-Pin SDRAM Memory) with the HMABAGL7C4R4N-VN code. These features help to prevent data corruption and ensure that the data stored in the memory is accurate and consistent.
Error Correction: Error correction refers to the process of detecting and correcting errors in data transmission and storage. In the case of the Hynix 128GB Memory, it uses Error Correction Code (ECC) technology to detect and correct errors in real-time. This helps to prevent data corruption and improve system stability.
Data Integrity: Data integrity refers to the accuracy and consistency of data stored in the memory. The Hynix 128GB Memory implements various techniques to ensure data integrity, including cyclic redundancy check (CRC) and data scrubbing. These techniques help to prevent data corruption and ensure that the data stored in the memory is accurate and consistent.
Power Efficiency and Energy Savings
The Hynix 128GB Memory (PC4-21300 DDR4 2166MHz 288-Pin SDRAM Memory) with the HMABAGL7C4R4N-VN code is designed for power efficiency and energy savings. The DDR4 technology used in this memory module is known for its low power consumption compared to older DDR3 memory.
Power Efficiency: The Hynix 128GB Memory uses a low voltage of 1.2V compared to the 1.5V used by DDR3 memory, which helps to reduce the overall power consumption of the system. Additionally, the memory’s low power consumption helps to reduce heat generation, which can improve system stability and reliability.
Energy Savings: The power efficiency of the Hynix 128GB Memory also leads to energy savings. By using less power, the system requires less energy to run, which can result in lower energy bills and a reduced carbon footprint. Additionally, the memory’s low power consumption can help to extend the life of the system’s power supply, which can save money in the long run.
General Information
- Brand Name: Sk Hynix
- MPN: HMABAGL7C4R4N-VN
- Type: Memory (RAM)
- RAM -Type: Pc4-21300
- Product Name: 128GB DDR4 SDRAM Memory Module
- SKU: HMABAGL7C4R4N-VN
Technical Information
- Storage Capacity: 128GB
- Memory Technology: DDR4 SDRAM
- Number Of Modules: 1 X 128GB
- Bus Speed: 2666MHz DDR4-21300/Pc4-2666v
- Data Integrity Check: Ecc
- Signal Processing: Registered,load Reduced
- Cas Latency Timings: Cl19
- Rank Features: Octal Rank X4
- Form Factor: 288-Pin LRDIMM
Physical Characteristics
- Dimensions (W X D X H) : 8.89 X 19.81 X 1.91 Cm (3.5 X 7.8 X 0.75 In)
- Weight: 0.45 Kg (1 Lb)
