Samsung M386AAK40B40-CWD7Q 128GB 2666Mhz PC4-21300 Cl19 DDR4 Ecc Registered Ram | New Bulk Pack

The M386AAK40B40-CWD7Q 128GB is a DDR4 Ecc Registered RAM module with a capacity of 128GB. It has a memory speed of 2666Mhz (PC4-21300) and operates at a voltage of 1.2V. The RAM is designed to enhance the performance of servers and workstations by providing high-speed memory and error correction capabilities. This module also has a CL19 latency, which refers to the number of clock cycles between a request to access data and the availability of the data.

M386AAK40B40-CWD7Q 128GB 1.2v Voltage Requirements RAM

The M386AAK40B40-CWD7Q 128GB DDR4 Ecc Registered RAM module operates at a voltage of 1.2V. This is the standard voltage for DDR4 memory and is necessary for proper operation. The lower voltage compared to DDR3 memory (1.5V) results in reduced power consumption and improved energy efficiency. The 1.2V voltage specification is important to consider when selecting compatible memory for a system to ensure compatibility and stability.

21300 Cl19 DDR4 Ecc Registered Ram

The M386AAK40B40-CWD7Q 128GB DDR4 Ecc Registered RAM module has a PC4-21300 specification, which refers to its speed and bus clock frequency. The number “21300” represents the maximum transfer rate in MB/s that the memory can handle. The module has a speed of 2666Mhz, which is the frequency at which the memory controller accesses the RAM.

The “CL19” in the specification refers to the latency of the memory, which is the number of clock cycles between a request to access data and the availability of the data. A lower number in the latency specification (CL) generally indicates faster performance.

The “Ecc Registered” aspect of the specification indicates that the module has Error Correction Code (ECC) capabilities, which helps detect and correct errors that may occur in the data stored in the memory. ECC is commonly used in servers and workstations for mission-critical applications where data integrity is important.